Ceramic powder and applications thereof

ABSTRACT

The present invention provides ceramic powder capable of being incorporated into rubber or a resin for the preparation of a composition, which shows excellent heat resistance and flame retardancy and which is used, for instance, as a semiconductor-sealing material. The ceramic powder has a multi-peak frequency distribution pattern having at least two peaks as a particle size distribution as determined using a laser diffraction-scattering type particle size-analyzer, wherein the maximum particle size for the first peak ranges from 40 to 80 μm and that for the second peak ranges from 3 to 8 μm and wherein the rate of the particles having a particle size of not less than 20 μm and less than 40 μm is not more than 20% by mass (inclusive of 0% by mass).

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.12/300,516, filed on Mar. 30, 2009, now U.S. Pat. No. 8,053,495 which isa 371 of PCT/JP07/059746, filed on May 11, 2007, and claims priority toJapanese Patent Application No. 2006-133464, filed on May 12, 2006.

TECHNICAL FIELD

The present invention relates to ceramic powder and the applicationsthereof.

BACKGROUND ART

The miniaturization, thinning or slimming, and pitch-reduction ofsemiconductor packages have rapidly been accelerated, in response to therecent requirements for the development of compact and light weight, andhigh quality electronic machinery and tools. In addition, the surfacemounting technique has been a leading mainstream of the packaging methodbecause this is quite favorable for realizing high density packaging ofa wiring board or substrate. As the semiconductor packages and themethods for packaging the same have thus been advanced, there have beenrequested for the semiconductor-sealing material to satisfy therequirements for the improvement of functions thereof such as thequality, in particular, moldability, heat resistance, andflame-retardancy. For this reason, for instance, investigation has beenmade concerning incorporation of ceramic powder, in particular,amorphous spherical silica powder into epoxy resin in a high density.The problems arising when incorporating ceramic powder into a resin at ahigh density (or high content) are those that the viscosity of theresulting semiconductor-sealing material increases and that this in turnincreases the rate of defectives to be formed during the molding andprocessing of the semiconductor devices such as the generation ofunfilled portions, the occurrence of wire-flowing, wire-cutting andchip-shifting.

To solve the foregoing problems, the semiconductor-sealing materialshave been improved from the viewpoint of resins on the one hand and fromthe viewpoint of the ceramic powder on the other hand.

As means for the improvement of the ceramic powder, there have beenknown, for instance, a method for increasing the Wardell to a levelranging from 0.7 to 1.0 (see Patent Document 1 specified below); amethod in which the gradient of the straight line illustrating theparticle size distribution expressed in terms of the Rosin-Rammler linediagram is set at a level of 0.6 to 0.95 to thus expand the particlesize distribution (see Patent Document 2 specified below); and a methodin which the ceramic powder is so designed that the particle sizethereof has a multi-peak particle size distribution or that the particlesize distribution thereof may have several peaks to thus bring theceramic powder close to that having the closest packing structure (seePatent Document 3 specified below). However, these conventional methodshave still been insufficient. More specifically, there has not yet beensolved such a problem that when increasing the rate of incorporation ofceramic powder into a resin, the resulting semiconductor-sealingmaterial causes an abrupt increase of the viscosity thereof.

Recently, electronic machinery and tools have widely been applied toautomobiles and therefore, it has been requested for these electronicmachinery and tools to satisfy the following requirements: they shouldhave an improved flame-retardancy without using any flame retarder whichmay apply a high load to the environment; they should have an improvedability to withstand high temperature environmental conditions severerthan that required for the household machinery and tools (heatresistance); and it should have an improved ability to withstand thecooling-heating cycles (thermal shocks). However, there has not yet beendeveloped any such ceramic powder which can satisfy all of the foregoingrequirements.

-   Patent Document 1: JP-A-3-066151;-   Patent Document 2: JP-A-6-080863;-   Patent Document 3: JP-A-8-003365

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

Accordingly, it is an object of the present invention to provide ceramicpowder which permits the preparation of a semiconductor-scaling materialhaving excellent moldability even when increasing the rate of content ofthe ceramic powder in a resin, and also having excellent heat resistanceand flame-retardancy; a composition and, in particular, asemiconductor-sealing material, which comprises at least one of a resinand rubber and the foregoing ceramic powder incorporated into the same.

Means for Solving the Problem

The present invention thus provides ceramic powder characterized byhaving a multi-peak frequency distribution pattern having at least twopeaks as a particle size distribution determined using a laserdiffraction-scattering type particle size-analyzer, the maximum particlesize for the first peak ranging from 40 to 80 μm and that for the secondpeak ranging from 3 to 8 μm, and the rate of the particles having aparticle size of not less than 20 μm and less than 40 μm being not morethan 20% by mass (inclusive of 0% by mass).

In this respect, the present invention preferably comprises at least oneembodiment selected from the groups consisting of 1) the ceramic powderfurther has a third peak whose maximum particle size ranges from 0.1 to0.8 μm; 2) the ceramic powder has an ammonia adsorption amount rangingfrom 0.1 to 1.8 μmole/g; 3) the ceramic powder is silica powder; 4) theceramic powder is silica powder and having an Al₂O₃ content ranging from100 to 8000 ppm.

In addition, the present invention also provides a compositioncomprising at least one of a resin and rubber and the ceramic powder ofthe present invention incorporated into the same. Furthermore, thepresent invention also relates to a semiconductor-sealing materialcomprising the composition of the present invention wherein thecomposition comprises an epoxy resin.

Effects of the Invention

The present invention can provide a resin composition or a rubbercomposition (hereunder both of them will comprehensively be referred toas “composition”) and, in particular, a semiconductor-scaling material,which can maintain its higher moldability and which is excellent in aheat resistance and a flame retardancy, even if the rate ofincorporation of the ceramic powder in the resin or rubber compositionis increased up to a level of not less than 90% by mass.

BEST MODE FOR CARRYING OUT THE INVENTION

The present invention will hereunder be described in more detail.

The powder according to the present invention comprises ceramic powderand example of ceramic powder includes powder of, for instance, silica,alumina, titania, magnesia, silicon nitride, aluminum nitride and boronnitride.

These powdery products may be used alone or a mixture of at least twopowdery products, but preferably used herein is silica powder since theuse thereof permits the preparation of a semiconductor-sealing materialhaving a thermal expansion coefficient close to that of a semiconductorelement, and the silica powder can further improve the heat resistance,the resistance to thermal shocks (cooling-heating cycles) and the moldwear-resistant properties. In this respect, particularly preferably usedherein are, for instance, amorphous silica prepared by meltingcrystalline silica at a high temperature, and amorphous silica preparedaccording to any synthetic method. The rate of amorphousness of theamorphous silica powder is preferably not less than 95% as determinedaccording to the method as will be detailed later.

The ceramic powder according to the present invention is characterizedby having a multi-peak frequency distribution pattern having at leasttwo peaks as a particle size distribution determined using a laserdiffraction-scattering type particle size-analyzer, the maximum particlesize for the first peak ranging from 40 to 80 μm and that for the secondpeak ranging from 3 to 8 μm, and the rate of the particles having aparticle size of not less than 20 μm and less than 40 μm being not morethan 20% by mass (inclusive of 0% by mass). The impartment of thesecharacteristic properties to the ceramic powder would permit thepreparation of a semiconductor-sealing material which can maintain itshigher moldability and which is also excellent in a heat resistance anda flame retardancy, even if the rate of incorporation of the ceramicpowder in an epoxy resin or the like is increased up to a level of notless than 90% by mass. In this connection, in the ceramic powder havinga multi-peak particle size distribution as disclosed in Patent Document3, the rate of the ceramic particles occupied by those having a particlesize ranging from 20 to 40 μm falls within the range of from about 40 to52% by mass.

A group of particles constituting the first peak whose maximum particlesize ranges from 40 to 80 μm are principal constituent particles of theceramic powder according to the present invention, but if the maximumparticle size thereof is less than 40 μm, the ceramic powder causes anabrupt increase of the viscosity thereof and this in turn makes, quitedifficult, the preparation of an intended composition having highmoldability. On the other hand, if the maximum particle size thereofexceeds 80 μm, the flow resistance of the particles in the resultingcomposition increases and the moldability of the composition is likewiseimpaired. The maximum particle size of the first peak preferably rangesfrom 50 to 70 μm. In this respect, the content of the particles whoseparticle size falls within the range of from 40 to 80 μm is preferablynot less than 40% by mass and in particular, the content thereof ispreferably not less than 45% by mass. Suitably, the upper limit thereofis, for instance, 70% by mass.

A group of particles constituting the second peak whose maximum particlesize ranges from 3 to 8 μm enter into interstices present in the groupof particles constituting the first peak to thus make the packingstructure of the particles denser and as a result, the presence of suchparticles constituting the second peak would permit the furtherimprovement of the packing characteristics of the ceramic powder and thefurther reduction of the viscosity of the resulting composition. Themaximum particle size thereof preferably ranges from 4 to 7 μm. Inparticular, if the maximum particle size of the particles constitutingthe second peak is so adjusted that it is 0.1 to 0.2 times the maximumparticle size of the particles constituting the first peak, theresulting ceramic powder is further improved in the packingcharacteristics. In this respect, however, the content of the particleswhose particle size falls within the range of from 3 to 8 μm ispreferably not less than 20% by mass and in particular, the content ofsuch particles is preferably not less than 30% by mass. Suitably, theupper limit thereof is, for instance, 60% by mass.

A group of particles constituting the third peak whose maximum particlesize ranges from 0.1 to 0.8 μm which may arbitrarily be used in thepresent invention enter into interstices of the packing structure formedby the particles constituting the first and second peaks to thus makethe packing structure of the particles denser. As a result, the presenceof such particles constituting the third peak would permit themaintenance of the excellent moldability even when the rate ofincorporation of the ceramic powder is increased in the resultingcomposition and accordingly, the use of the particles constituting thethird peak would permit the preparation of a composition having furtherexcellent heat resistance and flame retardancy. In this connection, thecontent of the particles having a particle size ranging from 0.1 to 0.8μm is preferably not less than 3% by mass and in particular, it ispreferably not less than 10% by mass. Suitably, the upper limit thereofis, for instance, 25% by mass.

In the present invention, the particles whose particle size is not lessthan 20 μm and less than 40 μm are not necessary for the dense packingstructure constituted by the particles constituting the foregoing two orthree peaks and therefore, it is most preferable that the ceramic powderis free of (0%) any such particle and the content thereof is at highest20% by mass (inclusive of 0%) and it is suitable that the contentthereof is preferably at highest 10% by mass (inclusive of 0%). Thiscondition is quite important and there has not yet been proposed anyceramic powder in which the content of the particles whose particle sizeis not less than 20 μm and less than 40 μm is strictly controlled.

It is common that a curing accelerator is incorporated into thesemiconductor-sealing material for the purpose of the acceleration ofthe reaction between an epoxy resin and a curing agent. Examples of suchcuring accelerators are organic phosphorus atom-containing ones such astributyl phosphine, methyl-dimethyl phosphine, triphenyl phosphine,tris(4-methylphenyl) phosphine, diphenyl phosphine, phenyl phosphine,tetraphenyl phosphine tetraphenyl borate, and triphenyl phosphinetetraphenyl borate; and organic nitrogen atom-containing onesrepresented by cycloamidine compounds such as 1,8-diaza-bicyclo(5,4,0)undecene-7,1,5-diaza-bicyclo(4,3,0) nonene, and5,6-di-butylamino-1,8-diaza-bicyclo(5,4,0) undecene-7. In general, therate of addition of these curing accelerators to the composition isselected in such a manner that it falls within the range of from 0.1 to5% by mass depending on the desired curing rate of each specificcomposition. However, all of these curing accelerators show strongcharacteristics as a Lewis acid and accordingly, they may impair theability of the resulting semiconductor-sealing material to withstandhigh temperature environmental conditions (heat resistance).

For this reason, the ceramic powder according to the present inventionshould preferably have a chemical absorption amount of ammonia rangingfrom 0.1 to 1.8 μmole/g. More preferably, the absorption amount ofammonia adsorbed by the ceramic powder ranges from 0.1 to 1.6 μmole/gand in particular, it preferably ranges from 0.2 to 1.4 μmole/g. Thelevel of the ammonia amount chemically adsorbed represents the magnitudeof the surface acidity of the ceramic powder. The control of the surfaceacidity of the ceramic powder would permit the achievement of stablecuring characteristics of the resulting composition simultaneous withthe achievement of the ability thereof to withstand high temperatureenvironmental conditions. In this respect, if a chemical absorptionamount of ammonia is less than 0.1 μmole/g, the curing accelerator isnot easily trapped at the acidic sites on the surface of the ceramicpowder and this may in turn result in the deterioration of the abilityof the resulting composition to withstand high temperature environmentalconditions (heat resistance). On the other hand, if the amount ofchemically adsorbed ammonia exceeds 1.8 μmole/g, the curing acceleratoris trapped at the acidic sites on the surface of the ceramic powder toan extremely high extent and this accordingly reduces the curing rate ofthe resulting composition and as a result, any desired cured compositioncannot be obtained even after the molding of the composition.

In case where the ceramic powder is, in particular, silica powder, theamount of chemically ammonia adsorption can be controlled through theadjustment of the content of Al₂O₃ present in the silica powder. Morespecifically, when the surface of the silica powder is doped with Alatoms, the sites doped with Al atoms may serve as Lewis acidic sites dueto the difference in the coordination number between Si atom and Alatom. The amount of chemically ammonia adsorption can easily becontrolled to a desired level ranging from 0.1 to 1.8 μmole/g byadjusting the content of Al₂O₃ present in the silica powder to a levelranging from 100 to 8000 ppm.

The average degree of sphericity of the ceramic powder of the presentinvention is preferably not less than 0.85 and in particular, not lessthan 0.90. The maximum level thereof is preferably 1.00. The control ofthe sphericity of the ceramic powder would permit the further reductionof the viscosity of the resulting composition.

The particle size distribution of the ceramic powder according to thepresent invention is one determined on the basis of the particle sizemeasurement carried out according to the laser diffraction-scatteringtechnique. The particle size distribution-analyzer usable herein is, forinstance, “Model LS-230” (the particle size channel has a width:log(μm)=0.04) available from Beckman Coulter Company. Upon thedetermination of the particle size, water is used as a solvent and eachsample is subjected to a dispersion treatment, as a pre-treatment, forone minute using a homogenizer while applying a power of 200 W. Inaddition, PIDS (Polarization Intensity Differential Scattering)concentration is adjusted to a level ranging from 45 to 55% by mass. Therefractive index of water is assumed to be 1.33, while taking intoconsideration the refractive index of the material for the sample powderwith regard to that of the sample powder. For instance, the refractiveindex of amorphous silica is assumed to be 1.50.

The term “maximum particle size” used herein means the central value(median) for the particle size range showing a maximum value in thefrequency particle size distribution as determined according to thelaser diffraction-scattering technique. For instance, when, in thecumulative particle size distribution, the cumulative value up to theparticle size of 32 μm is 50% by mass, that up to the particle size of48 μm is 65% by mass and that up to the particle size of 64 μm is 70% bymass, the maximum particle size within the particle size range showing amaximum value and extending from 32 to 48 μm can be calculated to be 40μm which is the central value of the foregoing particle size range (32to 48 μm).

The amount of the ammonia adsorption is determined as follows, using atemperature raising thermal desorption-mass spectroscopic analysisdevice: TPD-MS (for instance, a device available from ANELVA Corporationunder the trade name of “Model M-400”): (Pretreatment): About 0.1 g ofsample powder is precisely measured into a platinum dish, then thetemperature of the sample powder is raised from room temperature to 600°C. over 30 minutes in a tubular furnace, while flowing helium gasthrough the furnace at a flow rate of 40 ml/min, the sample powder isthen maintained in the furnace for 10 minutes at that temperature andthe temperature of the sample powder is reduced to 100° C.(Ammonia-Adsorption): The furnace is evacuated to vacuum whilemaintaining the temperature of the sample powder at 100° C., about 13kPa of ammonia gas is introduced into the tubular furnace to thus adsorbammonia on the sample powder over 15 minutes. After the tubular furnaceis evacuated to vacuum, helium gas is passed through the furnace at aflow rate of 50 ml/min for 15 minutes to thus purge the residual ammoniafrom the furnace and then the temperature of the sample is reduced toroom temperature. (Water-Treatment): Argon gas is bubbled through purewater at a flow rate of 10 ml/min, argon gas is blended with theresulting humidified gas at a flow rate of 40 ml/min to thus obtain aninert gas having a relative humidity of 20% and the foregoing samplepowder is exposed to this gas flow over one hour to thus replace theadsorbed ammonia with water. (Determination of Amount of AdsorbedAmmonia): The temperature of the sample powder is raised from roomtemperature to 1000° C. at a rate of temperature raise of 20° C./min,while flowing helium gas at a flow rate of 40 ml/min, to thus determinethe amount of the desorbed ammonia. In this connection, the quantitativeanalysis of ammonia adsorbed was carried out using the pattern of m/z=17obtained after making correction for the influence of water.

The rate of amorphousness is determined by subjecting each sample powderto the X-ray diffraction analysis within the range of 2θ for the CuKα-rays extending from 26° to 27.5° using a powder X-ray diffractiondevice (such as a device available from RIGAKU Co., Ltd. under the tradename of “Model Mini Flex”) and calculating the rate on the basis of theintensity ratio of characteristic diffraction peaks. For instance, incase of the silica powder, the crystalline silica shows a principal peakat 26.7° while the amorphous silica is free of such a peak. If bothcrystalline silica and amorphous silica are present in a sample, theheight of the peak observed at 26.7° would reflect the rate of thecrystalline silica present therein, the rate of the crystalline silicamixed in the sample powder [(X-ray diffraction intensity ofsample)/(X-ray diffraction intensity of crystalline silica)] can becalculated from the ratio of the intensity of X-ray observed for thestandard or reference sample of crystalline silica to that observed foreach sample powder and the rate of amorphousness can therefore bedetermined according to the following relation: Rate of Amorphousness(%)=[1−(rate of crystalline silica mixed in)]×100.

The Al₂O₃ content may be determined using, for instance, a fluorescentX-ray analysis device (XRF), an energy dispersive X-ray spectroscopydevice (EDX), an atomic absorption spectrometer (AAS), or a plasmaemission spectral analyzer (ICP). In the present invention, ceramicpowder was dissolved, with heating, in a 20:1 (volume ratio) hydrogenfluoride: perchloric acid mixed solvent followed by the dilution thereofwith pure water, the determination of the Al content using an atomicabsorption spectrometer available from Shimadzu Corporation and theconversion of the Al content into the Al₂O₃ content to thus determinethe desired Al₂O₃ content.

The average sphericity is determined by taking a particle image using astereomicroscope (such as one available from Nikon Corporation under thetrade name of “Model SMZ-10 Type”), incorporating the particle imageinto an image analyzer (such as a device available from Mountech Companyunder the trade name of “MacView”) and determining the projected area(A) and the peripheral length (PM) on the basis of the photograph tothus determine the average sphericity on the basis of these two data. Inthis respect, if the area of a true circle corresponding to theperipheral length (PM) thus determined is assumed to be (B), thecircularity of the particle is equal to A/B. Accordingly, if bearing inmind a true circle having a peripheral length identical to that (PM) ofthe sample, the following relation holds: B=π×(PM/2π)², since PM=2πr andB=πr², and accordingly, the circularity of each particle can berepresented by the following relation: Circularity=A/B=A×4π/(PM)². Thecircularity was determined for arbitrarily selected 200 particlesaccording to the foregoing procedures and the resulting average value issquared and this is deemed to be an intended average sphericity.

The ceramic powder according to the present invention can easily beprepared by blending, as arbitrary components, particles having anaverage particle size ranging from 0.1 to 0.8 μm, those having anaverage particle size ranging from 3 to 8 μm and those having an averageparticle size ranging from 40 to 80 μm. Moreover, when the ceramicpowder is powder of a spherical oxide such as spherical silica powder,the desired ceramic powder can be prepared according to a methodcomprising the steps of injecting raw powder into a flame having a hightemperature to thus melt and sphere the raw powder and subsequentlyrecovering the resulting spherical powder using a collecting machinesuch as a gravitational sedimentation chamber, a cyclone, bag filter, oran electrostatic precipitator, wherein processing conditions such as theparticle size of the starting powder, the amount thereof to be injectedand the temperature of the flame are appropriately changed, or therecovered powder is subjected to an operation such as classification,sieving or blending, or the recovered powder is subjected to acombination of the foregoing two kinds of treatments. The Al₂O₃ contentcan be controlled by, for instance, coating the surface of startingsilica powder with alumina particles having a particle size ranging fromabout 0.1 to 5 μm in an amount ranging from about 0.01 to 2% by mass andthen treating the coated powder with a flame to thus melt and sphere thecoated powder. The raw powder can be coated with alumina particles usinga commercially available coating device or a blender.

The composition of the present invention is one obtained byincorporating the ceramic powder according to the present invention intoat least one of a resin and rubber. The content of the ceramic powder tobe incorporated into the composition in general ranges from 10 to 99% bymass and more preferably 30 to 95% by mass.

Examples of such resins usable herein include epoxy resins, siliconeresins, phenol resins, melamine resins, urea resins, unsaturatedpolyesters, fluorine resins, polyamides such as polyimides,poly(amide-imides), and polyetherimides, polyesters such as polybutyleneterephthalate and polyethylene terephthalate, polyphenylene sulfides,wholly aromatic polyesters, polysulfones, liquid crystalline polymers,polyether sulfones, polycarbonates, maleimide-modified resins, ABSresins, AAS (acrylonitrile-acryl rubber/styrene) resins, and AES(acrylonitrile/ethylene/propylene/diene rubber-styrene) resins.

Among them, preferably used in a semiconductor-sealing material areepoxy resins each having at least two epoxy groups per molecule.Examples thereof are phenol novolak type epoxy resins, o-cresol novolactype epoxy resins, epoxy resins obtained by epoxy-modifying novolakresins of phenols with aldehydes, glycidylethers such as bisphenol A,bisphenol F and bisphenol S, glycidyl ester acid epoxy resins preparedthrough the reactions of polybasic acids such as phthalic acid anddimeric acids with epichlorhydrin, linear aliphatic epoxy resins,alicyclic epoxy resins, heterocyclic epoxy resins, alkyl-modifiedpolyfunctional epoxy resins, β-naphthol novolac type epoxy resins,1,6-dihydroxynaphthalene type epoxy resins, 2,7-dihydroxynaphthalenetype epoxy resins, and bishydroxy-biphenyl type epoxy resins, as well asepoxy resins in which a halogen such as bromine is incorporated in orderto impart flame retardancy to the composition. Among them, suitably usedherein include o-cresol novolak type epoxy resins, bishydroxy-biphenyltype epoxy resins and epoxy resins carrying naphthalene skeletons, fromthe viewpoint of water vapor resistance and resistance to solder reflow.

As curing agents for the epoxy resins, there may be listed, forinstance, novolak resins prepared by reacting a mixture comprising oneor at least two members selected from the group consisting of phenol,cresol, xylenol, resorcinol, chlorophenol, t-butylphenol, nonylphenol,isopropylphenol, and octylphenol with formaldehyde, paraformaldehyde orp-xylene in the presence of an oxidizing catalyst,poly(p-hydroxystyrene) resins, bisphenol compounds such as bisphenol Aand bisphenol S, tri-functional phenols such as pyrogallol andfluoroglucinol, acid anhydrides such as maleic anhydride, phthalicanhydride and pyromellitic anhydride, and aromatic amines such asm-phenylene diamine, diamino-diphenyl-methane and diamino-diphenylsulfone. A curing accelerator such as the aforementionedtriphenyl-phosphine and 1,8-diaza-bicyclo(5,4,0) undecene-7 can be usedfor the acceleration of the reaction of epoxy resins with curing agents.

The following components may, if necessary, be incorporated into thecomposition of the present invention. More specifically, examples ofsuch optional components include a stress-reducing agent, for instance,rubber-like materials such as silicone rubber, polysulfide rubber,acrylic rubber, butadiene-derived rubber, styrene-derived blockcopolymers, various kinds of thermoplastic resins, resinous materialssuch as silicone resins, epoxy resins, phenol resins which are partiallyor completely modified with, for instance, amino-silicone,epoxy-silicone, and alkoxy-silicone; a silane coupling agent, forinstance, epoxy-silanes such as γ-glycidoxy-propyl trimethoxy-silane,and β-(3,4-epoxy-cyclohexyl)ethyl-trimethoxy-silane, amino-silanes suchas aminopropyl-triethoxy-silane, ureido-propyl triethoxy-silane, andN-phenyl-aminopropyl trimethoxy-silane, a hydrophobic silane compoundsuch as phenyl trimethoxy-silane, methyl trimethoxy-silane and octadecyltrimethoxy-silane, and mercapto-silane; a surface-treating agent such asZr-chelate, titanium-coupling agents and aluminum-coupling agent; aflame retardant aid such as Sb₂O₃, Sb₂O₄ and Sb₂O₅; a flame retardantsuch as halogenated epoxy resins and phosphorus atom-containingcompounds; a coloring agent such as carbon black, iron oxides, dyes andpigments; and further a releasing agent such as naturally occurringwaxes, synthetic waxes, metal salts of linear fatty acids, acid amides,esters and paraffin.

The composition of the present invention can be prepared by blendingdesired amounts of the foregoing components in, for instance, a blenderor a Henschel mixer, then kneading the resulting blend using a heatingrolls, a kneader, a single-screw or twin-screw extruder, cooling andthen pulverizing the same.

The semiconductor-sealing material according to the present invention ispreferably the composition of the present invention which comprises anepoxy resin. When a semiconductor is sealed using thesemiconductor-sealing material according to the present invention,widely and commonly used molding means such as a transfer mold or amulti-plunger press can be used.

EXAMPLE Examples 1 to 5 and Comparative Examples 1 to 5

A pulverized product of natural quartzite was melted and sphered bysupplying the product to a flame formed through the combustion of amixture containing LPG and oxygen gas to thus form spherical amorphoussilica powder. In this respect, 10 kinds of spherical amorphous silicapowder samples A to J as shown in the following Table 1 were prepared,while variously adjusting the flame-forming conditions, the particlesize of the raw material, the feed rate of the raw material, theclassification conditions and the mixing conditions. The maximumparticle size and the content of particles having a particle size of notless than 20 μm and less than 40 μm were controlled by appropriatelyadjusting or changing the particle size of the starting material, theconditions for multi-stage sieving of the sphered powder and theblending amounts of the crude particles, fine particles, ultrafineparticles recovered through the sieving operations. The content of Al₂O₃was controlled by coating the surface of the pulverized product ofnatural quartzite with ultrafine particles of alumina having a particlesize of 0.5 μm in an amount ranging from 0.01 to 2% by mass, prior tothe melting and sphering of the pulverized product of natural quartzite.The average sphericity of these particles was controlled by properlyadjusting the flame temperature and the feed rate of the raw material.

All of the spherical amorphous silica powder samples A to J were foundto have a rate of amorphousness of not less than 99.5%. These powderysamples were subjected to the determination of the particle sizedistribution to thus obtain the maximum particle size and the content ofparticles having a particle size of not less than 20 μm and less than 40μm. In addition, these powdery samples were likewise inspected for theamount of chemically adsorbed ammonia, the content of Al₂O₃ and theaverage sphericity of the particles having a particle size of not lessthan 45 μm. The maximum particle sizes (hereunder referred to as P1, P2and P3, respectively) observed for the particles having particle sizesfalling within the range of from 40 to 80 μm, 3 to 8 μm and 0.1 to 0.8μm, respectively, were determined and the results thus obtained aresummarized in Table 1 given below.

For the purpose of assessing the resulting spherical amorphous silicapowder on the characteristic properties as the semiconductor-sealingmaterial, there were added, to 90 parts (part by mass; those in thefollowing description are shown in the same way also) each of thespherical amorphous silica powder samples A to J, there were added 4.2parts of 4,4′-bis(2,3-epoxypropoxy)-3,3′,5,5′-tetramethyl-bisphenyl typeepoxy resin, 4.3 parts of a phenol resin, 0.2 part oftriphenyl-phosphine, 0.5 part of γ-glycidoxy-propyl-trimethoxy-silane,0.3 part of carbon black, and 0.5 part of carnauba wax, then theresulting mixture was dry-blended in a Henschel mixer and subsequentlykneaded with heating in an intermeshing co-rotating twin screw extruder(screw diameter (D): 25 mm; kneading disk length: 10D mm; rotationalnumber of paddle: 150 rpm; discharge rate: 5 kg/h; heater temperature:105 to 110° C.). After cooling the kneaded product (discharged product)in a cooling press, the product was pulverized to thus give asemiconductor-sealing material and the latter was inspected for themoldability, flame retardancy and heat resistance according to thefollowing methods. The results thus obtained are likewise summarized inthe following Table 1.

(1) Moldability/Spiral Flow Test

Each semiconductor-sealing material was evaluated for a spiral flowvalue using a transfer molding machine equipped with a mold for thespiral flow-determination according to EMMI-I-66 (Epoxy Molding MaterialInstitute; Society of Plastic Industry). The transfer molding conditionsused were as follows: Molding temperature: 175° C.; Molding pressure:7.4 MPa; and Holding time: 90 sec.

(2) Flame Retardancy/UL-94

Each semiconductor-sealing material was subjected to transfer molding toform each corresponding specimen having a thickness of ⅛ inch, followedby the after-curing of the specimen at a temperature of 175° C. for 8hours and the evaluation of the flame retardancy thereof according tothe specification: UL-94.

(3) Heat Resistance/Ability to Withstand High Temperature EnvironmentalConditions After a TEG-ML1020 chip was mounted on SOP-28p (made of LeadFrame 42 Alloy) and the lead frame and the chip were connected at 8positions with gold wires each having a diameter Φ30 μm, the resultingassembly was packaged with each semiconductor-sealing material to thusproduce 20 each of the corresponding mimic or simulated semiconductors.

These 20 mimic semiconductors were subjected to after-curing operationat a temperature of 175° C. for 8 hours and they were allowed to standin an environment maintained at 195° C. for 1500 hours, followed bycooling the same down to room temperature and the confirmation onwhether they could pass an electric current therethrough or not to thusenumerate the number of mimic semiconductors in which even one out ofthe 8 wired positions was found to be failed in the continuity.

TABLE 1 Ex. No. 1 2 3 4 5 Spherical amorphous silica powder sample No. AB C D E Maximum Particle Size P1 (μm) 48 48 55 55 64 P2 (μm) 5.6 7.6 3.54.5 4.5 P3 (μm) 0.5 0.5 0.6 0.9 0.4 Rate (%) of particles having aparticle size of not 6.4 13.9 7.4 15.6 14.3 less than 20 μm and lessthan 40 μm Amt. of chemically adsorbed ammonia (μmole/g) 0.8 0.6 1.2 1.60.05 Al₂O₃ content (ppm) 1190 910 2600 5810 310 Average sphericity ofparticles having a particle 0.92 0.91 0.89 0.90 0.90 size of not lessthan 45 μm (−) Moldability/Spiral Flow Value (cm) 135 127 131 119 120Flame Retardancy/UL-94 V-0 V-0 V-0 V-0 V-0 Heat Resistance/Ability toWithstand High Temp. 0/20 0/20 0/20 0/20 1/20 Comp. Ex. No. 1 2 3 4 5Spherical amorphous silica powder sample No. F G H I J Maximum ParticleSize P1 (μm) 85 35 48 55 42 P2 (μm) 5.6 5.6 2.2 11 3.5 P3 (μm) 0.5 0.50.5 0.5 0.6 Rate (%) of particles having a particle size of not 5.9 18.614.6 19.8 37.0 less than 20 μm and less than 40 μm Amt. of chemicallyadsorbed ammonia (μmole/g) 1.6 1.8 0.1 1.1 0.2 Al₂O₃ content (ppm) 56606670 390 1560 560 Average sphericity of particles having a particle 0.890.94 0.90 0.91 0.88 size of not less than 45 μm (−) Moldability/SpiralFlow Value (cm) 80 72 106 103 86 Flame Retardancy/UL-94 V-0 V-0 V-0 V-0V-1 Heat Resistance/Ability to Withstand High Temp. 1/20 0/20 2/20 0/203/20

As will be clear when comparing the results obtained in Examples withthose obtained in Comparative Examples, the ceramic powder according tothe present invention permits the preparation of a composition, inparticular, a semiconductor-sealing material which is excellent in themoldability, the heat resistance and the flame retardancy as comparedwith the compositions obtained in Comparative Examples.

INDUSTRIAL APPLICABILITY

The ceramic powder according to the present invention can be applied toa semiconductor-sealing material used in, for instance, automobiles,portable telephones, personal computers and domestic appliances;multilayer plates on which semiconductors are mounted, and furtherfillers such as putty, sealing agents, various kinds of rubbermaterials, and various kinds of engineering plastics. In addition, theceramic powder according to the present invention can likewise be usedas, for instance, prepregs for use in, for instance, printed boardsproduced by impregnating glass woven fabrics, glass nonwoven fabrics andother organic base materials with the ceramic powder of the invention aswell as various kinds of engineering plastics, in addition to theforegoing semiconductor-sealing material.

What is claimed is:
 1. Ceramic powder having a multi-peak frequencydistribution pattern having at least two peaks as a particle sizedistribution as determined using a laser diffraction-scattering typeparticle size-analyzer, the maximum particle size for the first peakranging from 40 to 80 μm and that for the second peak ranging from 3 to8 μm, the rate of the particles having a particle size of not less than20 μm and less than 40 μm being not more than 20% by mass (inclusive of0% by mass), the ceramic powder having a chemical absorption amount ofammonia ranging from 0.1 to 1.8 μmole/g the ceramic powder being silicapowder having an Al₂O₃ content ranging from 100 to 8,000 ppm, and theceramic powder being produced by coating the surface of starting silicapowder with alumina particles and then treating the coated powder with aflame to thus melt and sphere the coated powder.
 2. The ceramic powderas set forth in claim 1, further having a third peak whose maximumparticle size ranges from 0.1 to 0.8 μm.
 3. The ceramic powder as setforth in claim 2, being silica powder.
 4. A composition comprising atleast one of a resin and rubber, and the ceramic powder as set forth inclaim 1, incorporated therein.
 5. A composition comprising at least oneof a resin and rubber, and the ceramic powder as set forth in claim 2,incorporated therein.
 6. A semiconductor-sealing material comprising thecomposition as set forth in claim 4, wherein at least one of the resinand rubber is an epoxy resin.
 7. A semiconductor-sealing materialcomprising the composition as set forth in claim 5, wherein at least oneof the resin and rubber is an epoxy resin.